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Hydrogen patterning of Ga1-xMnxAs for planar spintronics

  • Author(s): Farshchi, R;
  • Ashby, PD;
  • Hwang, DJ;
  • Grigoropoulos, CP;
  • Chopdekar, RV;
  • Suzuki, Y;
  • Dubon, OD
  • et al.

We demonstrate two patterning techniques based on hydrogen passivation of Ga1-xMnxAs to produce isolated ferromagnetically active regions embedded uniformly in a paramagnetic, insulating host. The first method consists of selective hydrogenation of Ga1-xMnxAs by lithographic masking. Magnetotransport measurements of Hall-bars made in this manner display the characteristic properties of the hole-mediated ferromagnetic phase, which result from good pattern isolation. Arrays of Ga1-xMnxAs dots as small as 250 nm across have been realized by this process. The second process consists of blanket hydrogenation of Ga1-xMnxAs followed by local reactivation using confined low-power pulsed-laser annealing. Conductance imaging reveals local electrical reactivation of micrometer-sized regions that accompanies the restoration of ferromagnetism. The spatial resolution achievable with this method can potentially reach <100 nm by employing near-field laser processing. The high spatial resolution attainable by hydrogenation patterning enables the development of systems with novel functionalities such as lateral spin-injection as well as the exploration of magnetization dynamics in individual and coupled structures made from this novel class of semiconductors. © 2007 Elsevier B.V. All rights reserved.

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