GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates
- Author(s): Tu, Charles W
- et al.
Published Web Locationhttp://ieeexplore.ieee.org/iel5/68/18782/00867974.pdf?isnumber=18782∏=JNL&arnumber=867974&arSt=960&ared=962&arAuthor=Xin%2C+H.P.%3B+Welty%2C+R.J.%3B+Tu%2C+C.W.
Novel red light-emitting diodes (LEDs) based on GaN0.011P0.989–GaP double-heterostructure (DH) directly grown on (100) GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LED’s, this novel LED structure eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the uncoated devices made with the heterojunction bipolar transistor masks, the emission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.