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GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

  • Author(s): Tu, Charles W
  • et al.
Abstract

Novel red light-emitting diodes (LEDs) based on GaN0.011P0.989–GaP double-heterostructure (DH) directly grown on (100) GaP substrates have been fabricated for the first time. The samples were grown by gas-source molecular beam epitaxy with an RF nitrogen radical beam source to incorporate N in GaP. Compared to conventional GaAs-based AlGaInP red LED’s, this novel LED structure eliminates the complicated steps of etching the light-absorption GaAs substrate and wafer-bonding to a transparent GaP substrate. Based on the uncoated devices made with the heterojunction bipolar transistor masks, the emission efficiency of the DH LEDs is 20 times stronger than that of a GaNP pn homojunction diode.

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