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Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

  • Author(s): Wong, D
  • Wang, Y
  • Jin, W
  • Tsai, HZ
  • Bostwick, A
  • Rotenberg, E
  • Kawakami, RK
  • Zettl, A
  • Mostofi, AA
  • Lischner, J
  • Crommie, MF
  • et al.
Abstract

© 2018 American Physical Society. We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

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