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Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy
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https://doi.org/10.1364/cleo_at.2017.ath3c.5Abstract
Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the Γ, L, and X valleys of silicon.
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