A 3 V 110 μW 3.1 ppm/°C curvature-compensated CMOS bandgap reference
Skip to main content
eScholarship
Open Access Publications from the University of California

UC Riverside

UC Riverside Previously Published Works bannerUC Riverside

A 3 V 110 μW 3.1 ppm/°C curvature-compensated CMOS bandgap reference

Abstract

This paper presents design of a high-precision curvature-compensated bandgap reference (BGR) circuit implemented in a 0.35 μm CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves the lowest reported temperature coefficient of ~3.1 ppm/°C over a wide temperature range of [−20°C/+100°C] after trimming, a power supply rejection ratio of −80 dB at 1 kHz and an output noise level of 1.43 μV $$ \sqrt {\text{Hz}} $$ at 1 kHz. The BGR circuit consumes a very low current of 37 μA at 3 V and works for a power supply down to 1.5 V. The BGR circuit has a die size of 980 μm × 830 μm.

Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View