A 3 V 110 μW 3.1 ppm/°C curvature-compensated CMOS bandgap reference
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A 3 V 110 μW 3.1 ppm/°C curvature-compensated CMOS bandgap reference

  • Author(s): Guan, Xiaokang;
  • Wang, Xin;
  • Wang, Albert;
  • Zhao, Bin
  • et al.
Abstract

This paper presents design of a high-precision curvature-compensated bandgap reference (BGR) circuit implemented in a 0.35 μm CMOS technology. The circuit delivers an output voltage of 1.09 V and achieves the lowest reported temperature coefficient of ~3.1 ppm/°C over a wide temperature range of [−20°C/+100°C] after trimming, a power supply rejection ratio of −80 dB at 1 kHz and an output noise level of 1.43 μV $$ \sqrt {\text{Hz}} $$ at 1 kHz. The BGR circuit consumes a very low current of 37 μA at 3 V and works for a power supply down to 1.5 V. The BGR circuit has a die size of 980 μm × 830 μm.

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