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Structural and electronic properties of amorphous and polycrystalline In2Se3 films

Published Web Location

https://doi.org/10.1063/1.1592631
Abstract

Structural and electronic properties of amorphous and polycrystalline In2Se3 films were discussed. The effect of deposition conditions on the film phase was also studied. It was found that the increased resistivity of amorphous In2Se3 films is due to replacement of In-In bonds with In-Se bonds during crystallization.

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