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1.5 nm fabrication of test patterns for characterization of metrological systems

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http://avs.scitation.org/doi/pdf/10.1116/1.4935253
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Abstract

Any metrology tool is only as good as it is calibrated. The characterization of metrology systems requires test patterns at a scale about ten times smaller than the measured features. The fabrication of patterns with linewidths down to 1.5 nm is described. The test sample was designed in such a way that the distribution of linewidths appears to be random at any location. This pseudorandom test pattern is used to characterize dimensional metrology equipment over its entire dynamic range by extracting the modulation transfer function of the system. The test pattern contains alternating lines of silicon and tungsten silicide, each according to its designed width. The fabricated test samples were imaged using a transmission electron microscope, a scanning electron microscope, and an atomic force microscope.

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