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Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates

  • Author(s): Ben-Yaacov, Tammy
  • Ive, Tommy
  • Walle, Chris G.
  • Mishra, Umesh K.
  • Speck, James S.
  • Denbaars, Steven P.
  • et al.
Abstract

We investigated the properties of indium-doped zinc oxide layers grown by metalorganic chemical vapor deposition on semi-insulating GaN(0001) templates. Specular and transparent films were grown with n-type carrier concentrations up to 1.82 × 1019 cm−3 as determined by Hall measurements, and all In-doped films had carrier concentrations significantly higher than that of a comparable undoped film. For low In flows, the carrier concentration increased accordingly with trimethyl-indium (TMIn) flow until a maximum carrier concentration of 1.82 × 1019 cm−3 was realized. For higher In flows, the carrier concentration decreased with increasing TMIn flow rate. Sheet resistance as low as 185 Ω/sq was achieved for the In-doped films, which is a significant decrease from that of a comparable undoped ZnO film. Our n-type doping studies show that In is an effective dopant for controlling the n-type conductivity of ZnO.

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