Skip to main content
eScholarship
Open Access Publications from the University of California

Fabrication of dislocation-free tensile strained Si thin films using controllably oxidized porous Si substrates

  • Author(s): Kim, J
  • Xie, Y H
  • et al.
Abstract

A method to fabricate strained Si films is reported via the oxidation of a thin Si film on a porous Si substrate. The Si film can be put under tensile stress in a controllable fashion through the expansion of the porous Si upon low temperature oxidation. The thin Si layer on porous Si substrate can be fabricated using a self-limiting anodization of epitaxially grown intrinsic Si on a heavily doped p-type Si substrate. Tensile strain of up to similar to 1% is observed in 100 nm thick Si films, making it suitable for the various device applications based on strained Si. (c) 2006 American Institute of Physics.

Many UC-authored scholarly publications are freely available on this site because of the UC Academic Senate's Open Access Policy. Let us know how this access is important for you.

Main Content
Current View