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Properties of Cu-flux-grown UCu2Si2
Abstract
The properties of Cu-flux-grown UCu2Si2 were discussed. The crystals of UCu2Si2 were grown by slow cooling of dilute solutions of molten Cu containing U and Si in the stoichiometric ratio 1:2. Magnetization measurements were performed for 2K ≤T≤ 350K using a commercial SQUID magnetometer. It was found that single crystals of UCu2Si2 grown from Cu flux have a 50 K antiferromagnetic transition below the 100 K ferromagnetic transition.
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