Skip to main content
Open Access Publications from the University of California

UC Santa Barbara

UC Santa Barbara Previously Published Works bannerUC Santa Barbara

High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

  • Author(s): Jayaraman, V;
  • Mehta, M;
  • Jackson, A W;
  • Wu, S;
  • Okuno, Y;
  • Piprek, J;
  • Bowers, J E
  • et al.

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134 degreesC maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80 degreesC, in various devices in the 1310-1340 nm wavelength range.

Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View