UC Santa Barbara
Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum well
- Author(s): Park, H
- Fang, A W
- Kodama, S
- Bowers, J E
- et al.
A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW. (c) 2005 Optical Society of America.
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