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Processing issues in top-down approaches to quantum computer development in silicon

  • Author(s): Park, SJ
  • Persaud, A
  • Liddle, JA
  • Nilsson, J
  • Bokor, J
  • Schneider, DH
  • Rangelow, IW
  • Schenkel, T
  • et al.
Abstract

We describe critical processing issues in our development of single-atom devices for solid-state quantum information processing. Integration of single 31P atoms with control gates and single electron transistor (SET) readout structures is addressed in a silicon-based approach. Results on electrical activation of low-energy (15 keV) P implants in silicon show a strong dose effect on the electrical activation fractions. We identify dopant segregation to the SiO2/Si interface during rapid thermal annealing as a dopant loss mechanism and discuss means to minimize it. Silicon nanowire SET pairs with nanowire width of 10-20 nm are formed by electron-beam lithography in SOI. We present initial results from Coulomb blockade experiments and discuss issues of control gate integration for sub-40 nm gate pitches. © 2004 Elsevier B.V. All rights reserved.

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