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Oxygen migration during resistance switching and failure of hafnium oxide memristors

  • Author(s): Kumar, S
  • Wang, Z
  • Huang, X
  • Kumari, N
  • Davila, N
  • Strachan, JP
  • Vine, D
  • Kilcoyne, ALD
  • Nishi, Y
  • Williams, RS
  • et al.

Published Web Location

http://aip.scitation.org/doi/10.1063/1.4974535
No data is associated with this publication.
Abstract

© 2017 Author(s). While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights required for memristor modeling, extended investigations of the role of oxygen migration during ageing and failure remain to be detailed. Such detailing will enable failure-tolerant design, which can lead to enhanced performance of memristor-based next-generation storage-class memory. Here, we directly observed lateral oxygen migration using in-situ synchrotron x-ray absorption spectromicroscopy of HfOxmemristors during initial resistance switching, wear over millions of switching cycles, and eventual failure, through which we determined potential physical causes of failure. Using this information, we reengineered devices to mitigate three failure mechanisms and demonstrated an improvement in endurance of about three orders of magnitude.

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