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Effect of rare-earth doping in R CrSb3 (R=La, Pr, Sm, and Gd)

  • Author(s): Jackson, DD
  • Fisk, Z
  • et al.
Abstract

We report on the electrical resistivity and magnetic susceptibility of La or Gd doped R CrSb3 (R=La, Pr, Sm, and Gd). Single crystals were grown by increasing the nominal dopant by 25%. In general, two magnetic ordering transitions are found, Tc1 is attributed to ferromagnetic ordering of the itinerant Cr sublattice, and, at lower temperatures, Tc2 is attributed to ordering of the localized rare-earth sublattice. Alloying on the rare-earth site varies the de Gennes factor, DG= (g-1)2 J (J+1), and d Tc1 d (DG) =-2 K, while d Tc2 d (DG) =5 K. These ordering temperatures are found to converge at GdCrSb3, where a single ferrimagnetic transition is found at Tc2 =86 K due to an antialignment of the itinerant Cr magnetic sublattice and the localized rare-earth magnetic sublattice. Initially, for DG<3.5, the two magnetic sublattices order in a ferromagnetic ground state, and the paramagnetic Weiss temperature decreases at the same rate as Tc1. But for DG>4.5, the rare-earth magnetic sublattice antialigns with respect to the Cr sublattice, and the Weiss temperature decreases five times as fast. In the region between (3.5

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