Lawrence Berkeley National Laboratory

The high scintillation luminosity of n-type GaAs at 10 °K is surprising because (1) with a refractive index of 3.5, escape is inhibited by total internal reflection and (2) narrow-beam experiments at 90 °K report infrared absorption coefficients of several per cm. This paper presents Monte Carlo calculations showing that the high luminosity at 10 °K can be explained if (1) the narrow-beam absorption is almost all optical scattering and (2) the absolute absorption coefficient is below 0.1 per cm. Sixteen surface reflector configurations are simulated for a range of internal scattering and absolute absorption coefficients, and these can guide the design of cryogenic scintillating GaAs targets for the direct detection of dark matter. The discussion section presents a possible infrared scattering mechanism based on the metallic nature of n-type GaAs. A supplement file describes (1) the Monte Carlo program steps in detail and (2) how narrow-beam and integrating sphere experiments can measure the cryogenic optical scattering and absolute absorption coefficients.