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Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films.

  • Author(s): Saremi, Sahar;
  • Xu, Ruijuan;
  • Dedon, Liv R;
  • Mundy, Julia A;
  • Hsu, Shang-Lin;
  • Chen, Zuhuang;
  • Damodaran, Anoop R;
  • Chapman, Scott P;
  • Evans, Joseph T;
  • Martin, Lane W
  • et al.
Abstract

A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.

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