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Enhanced Electrical Resistivity and Properties via Ion Bombardment of Ferroelectric Thin Films

Published Web Location

https://doi.org/10.1002/adma.201603968
Abstract

A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.

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