Solution-Processed Metal Oxide Semiconductors and Their Applications
- Author(s): Chen, Huajun Chen
- Advisor(s): Yang, Yang
- et al.
Research on electronic devices formed via solution process approaches is a key part of next-generation macro-electronics, such as displays and sensors. Unlike vacuum-based deposition techniques, liquid-phase starting materials support diverse device fabrication routes. Additionally, these techniques can be employed for selective deposition and the creation of various pattern shapes and the low cost of facilities and materials can save expense compared to vacuum infrastructure. Despite the advantages of solution processing, the commercial scaling and applications of this fabrication method are still in their early stages. In particular, the low electrical performance of solution-processed devices is the biggest obstacle to being a broad contributor.
In this thesis, I will present the design strategy of high-performance oxide semiconductor thin-film transistors via low-temperature processes, interface engineering and new device structure design to improve mobility and reliability. Additionally, transistor-based biosensor platforms based on high-performance oxide semiconductors will be discussed. Low-dimension semiconductors derived from solution processes have high sensitivity when compared with bulk semiconductors and the uniformity and reproducibility are much better than prevalent nano-scale bioelectronics. The detection of several kinds of molecules will be demonstrated.