Lawrence Berkeley National Laboratory
Modification of magnetocrystalline anisotropy via ion-implantation
- Author(s): Lee, MS
- Chopdekar, RV
- Shafer, P
- Arenholz, E
- Takamura, Y
- et al.
Published Web Locationhttps://doi.org/10.1063/1.5134867
© 2020 Author(s). The ability to systematically modify the magnetic properties of epitaxial La0.7Sr0.3MnO3 thin films is demonstrated through the use of Ar+ ion implantation. With increasing implant dose, a uniaxial expansion of the c-axis of the unit cell leads to a transition from in-plane toward perpendicular magnetic anisotropy. Above a critical dose of 3 × 1013 Ar+/cm2, significant crystalline disorder exists leading to a decrease in the average Mn valence state and near complete suppression of magnetization. Combined with lithographic techniques, ion implantation enables the fabrication of magnetic spin textures consisting of adjacent regions with tunable magnetic anisotropy in complex oxide thin films.