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Charge ordering and magnetoresistance due to reduced double exchange

  • Author(s): Liu, K
  • Wu, X
  • Ahn, K
  • Sulchek, T
  • Chien, C
  • Xiao, JQ
  • et al.
Abstract

Structural, transport, and magnetic properties of (Formula presented)(Formula presented)(Formula presented) (0≤x≤1) have been studied to probe the consequence of strong lattice distortion and reduced double exchange. Charge ordering has been observed over a large composition range of 0.30≤x≤0.80. For 0.33≤x≤0.40, at low temperatures, a magnetic field induces a first-order antiferromagnetic semiconductor to ferromagnetic metal transition and reduces the resistance by several orders of magnitude. These results illustrate the competition between double exchange and mechanisms that promote charge localization. © 1996 The American Physical Society.

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