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Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

  • Author(s): Yamamoto, N
  • Itoh, H
  • Grillo, V
  • Chichibu, S F
  • Keller, S
  • Speck, J S
  • DenBaars, S P
  • Mishra, U K
  • Nakamura, S
  • Salviati, G
  • et al.
Abstract

Cathodoluminescence technique combined with transmission electron microscopy (TEM-CL) has been used to characterize optical properties of dislocations in GaN epilayers. The dislocations act as nonradiative centers with different recombination rates. TEM-CL observation showed that even for the same Burgers vector of a, the dislocations show different electrical activity depending on the direction of dislocation line, i.e., the edge-type dislocation parallel to the c plane is very active, while the screw-type one is less active. The simulation of the CL images gives us the information of parameters such as carrier lifetime and diffusion length. (C) 2003 American Institute of Physics.

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