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Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

  • Author(s): Meyertholen, A.D.
  • Li, Z.Q.
  • Basov, D.N.
  • Fogler, M.M.
  • Martin, M.C.
  • Wang, G.M.
  • Dhoot, A.S.
  • Moses, D.
  • Heeger, A.J.
  • et al.
Abstract

The authors show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, they carry out experiments and modeling of infrared spectromicroscopy of poly-hexylthiophene (FETs) in which charge injection is affected by a relatively low resistance of the gate insulators. They conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.

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