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Cross-plane Seebeck coefficient of ErAs : InGaAs/InGaAlAs superlattices

  • Author(s): Zeng, G H
  • Zide, JMO
  • Kim, W
  • Bowers, J E
  • Gossard, A C
  • Bian, Z X
  • Zhang, Y
  • Shakouri, A
  • Singer, S L
  • Majumdar, A
  • et al.
Abstract

We characterize cross-plane and in-plane Seebeck coefficients for ErAs:InGaAs/InGaAlAs superlattices with different carrier concentrations using test patterns integrated with microheaters. The microheater creates a local temperature difference, and the cross-plane Seebeck coefficients of the superlattices are determined by a combination of experimental measurements and finite element simulations. The cross-plane Seebeck coefficients are compared to the in-plane Seebeck coefficients and a significant increase in the cross-plane Seebeck coefficient over the in-plane Seebeck coefficient is observed. Differences between cross-plane and in-plane Seebeck coefficients decrease as the carrier concentration increases, which is indicative of heterostructure thermionic emission in the cross-plane direction. (c) 2007 American Institute of Physics.

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