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Liberation of ion implanted Ge nanocrystals from a silicon dioxide matrix via hydrofluoric acid vapor etching
- Author(s): Sharp, I.D.;
- Xu, Q.;
- Liao, C.Y.;
- Ager, J.W.;
- Beeman, J.W.;
- Yu, K.M.;
- Zakharov, D.;
- Liliental-Weber, Z.;
- Haller, E.E.
- et al.
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