A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor
- Author(s): Nguyen, DP
- Pham, AV
- Aryanfar, F
- et al.
Published Web Locationhttps://doi.org/10.1109/LMWC.2016.2597235
© 2016 IEEE. A K-band monolithic microwave integrated circuit (MMIC) transmit and receive (T/R) single pole double throw (SPDT) switch with low insertion loss, high isolation and ultra-high output power is demonstrated using 0.15-μm Gallium Arsenide (GaAs) technology. A shunt field effect transistor (FET) configuration is used to provide low insertion loss and high isolation while the stacked-FET is employed to improve power handling capability. The novel GaAs switch exhibits a minimum measured insertion loss of 1.4 dB and less than 2.5 dB from 22 GHz to 26 GHz as well as 44 dB isolation. The measured input 1-dB power compression point (P1,dB) exceeds 4 W.
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