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Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

  • Author(s): Hwang, C;
  • Hwang, J;
  • Lee, JE;
  • Denlinger, J;
  • Mo, SK
  • et al.

Published Web Location

https://doi.org/10.1063/1.4986425
Abstract

We have investigated the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ∼50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.

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