Lawrence Berkeley National Laboratory
Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain
- Author(s): Hwang, C
- Hwang, J
- Lee, JE
- Denlinger, J
- Mo, SK
- et al.
Published Web Locationhttps://doi.org/10.1063/1.4986425
© 2017 Author(s). We have investigated the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ∼50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.