UC Davis

In the last decade, interest in the use of beta gallium oxide (β-Ga₂O₃) as a semiconductor for high power/high temperature devices and deep-UV sensors has grown. Ga₂O₃ has an enormous band gap of 4.8 eV, which makes it well suited for these applications. Compared to thin films, nanowires exhibit a higher surface-to-volume ratio, increasing their sensitivity for detection of chemical substances and light. In this work, we explore a simple and inexpensive method of growing high-density gallium oxide nanowires at high temperatures. Gallium oxide nanowire growth can be achieved by heating and oxidizing pure gallium at high temperatures (~ 1000 °C) in the presence of trace amounts of oxygen. This process can be optimized to large-scale production to grow high-quality, dense and long Ga₂O₃ nanowires. We show the results of morphological, structural, electrical and optical characterization of the β-Ga₂O₃ nanowires including the optical bandgap and photoconductance. The influence of density on these Ga₂O₃ nanowires and their properties will be examined in order to determine the optimum configuration for the detection of UV light.