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Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance

  • Author(s): Lasaosa, D
  • Shi, J W
  • Pasquariello, D
  • Gan, K G
  • Tien, M C
  • Chang, H H
  • Chu, S W
  • Sun, C K
  • Chiu, Y J
  • Bowers, J E
  • et al.
Abstract

Traveling-wave photodetectors (TWPDs) are an attractive way to simultaneously maximize external quantum efficiency, electrical bandwidth, and maximum unsaturated output power. We review recent advances in TWPDs. Record high-peak output voltage together with ultrahigh-speed performance has been observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal TWPDs at the wavelengths of 800 and 1300 nm. An approach to simultaneously obtain high bandwidth and high external efficiency is a traveling-wave amplifier-photodetector (TAP detector) that combines gain and absorption in either a sequential or simultaneous traveling-wave structure.

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