Multilayer ReS2 lateral p-n homojunction for photoemission and photodetection
- Author(s): Najmzadeh, Mohammad
- Ko, Changhyun
- Wu, Kedi
- Tongay, Sefaattin
- Wu, Junqiao
- et al.
Published Web Locationhttps://doi.org/10.7567/APEX.9.055201
In this paper, a multilayer ReS2 p–n homojunction is fabricated on an oxidized Si substrate, and its photoemission under a forward bias and its photodetection under a reverse bias are reported for the first time. Au nanoparticles were used to make lateral p–n homojunctions. The device shows room temperature photoemission in the IR range, and in the photodetector mode, it shows a 0.41A/W responsivity under illumination by a 660nm red laser.