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Spin transference and magnetoresistance amplification in a transistor

  • Author(s): Dery, H
  • Cywinski, L
  • Sham, L J
  • et al.
Abstract

A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin-diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room-temperature amplification of the magnetoresistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.

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