Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
- Chen, Ke;
- Song, Bai;
- Ravichandran, Navaneetha K;
- Zheng, Qiye;
- Chen, Xi;
- Lee, Hwijong;
- Sun, Haoran;
- Li, Sheng;
- Udalamatta Gamage, Geethal Amila Gamage;
- Tian, Fei;
- Ding, Zhiwei;
- Song, Qichen;
- Rai, Akash;
- Wu, Hanlin;
- Koirala, Pawan;
- Schmidt, Aaron J;
- Watanabe, Kenji;
- Lv, Bing;
- Ren, Zhifeng;
- Shi, Li;
- Cahill, David G;
- Taniguchi, Takashi;
- Broido, David;
- Chen, Gang
- et al.
Published Web Location
https://science.sciencemag.org/content/367/6477/555.abstractAbstract
Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched 10B or 11B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.
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