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Distance Dependence of Electronic Energy Transfer to Semiconductor Surfaces:n3π*Pyrazine/GaAs(110)

  • Author(s): Whitmore, PM
  • Alivisatos, AP
  • Harris, CB
  • et al.
Abstract

Energy transfer from n3* pyrazine to GaAs(110) has been studied. Within experimental error, a classical dielectric model quantitatively reproduces measurements of the distance-dependent lifetime for emitter-surface separations from 430 to 20. Analysis of the energy transfer shows that the molecular electronic excitation is dissipated through the creation of electron-hole pairs in the solid by the high-wave-vector components of the dipole near field. © 1983 The American Physical Society.

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