Lawrence Berkeley National Laboratory
Distance Dependence of Electronic Energy Transfer to Semiconductor Surfaces:n3π*Pyrazine/GaAs(110)
- Author(s): Whitmore, PM
- Alivisatos, AP
- Harris, CB
- et al.
Published Web Locationhttps://doi.org/10.1103/physrevlett.50.1092
Energy transfer from n3* pyrazine to GaAs(110) has been studied. Within experimental error, a classical dielectric model quantitatively reproduces measurements of the distance-dependent lifetime for emitter-surface separations from 430 to 20. Analysis of the energy transfer shows that the molecular electronic excitation is dissipated through the creation of electron-hole pairs in the solid by the high-wave-vector components of the dipole near field. © 1983 The American Physical Society.