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Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction

  • Author(s): Barabash, R I
  • Ice, G E
  • Liu, W
  • Roder, C
  • Figge, S
  • Einfeldt, S
  • Hommel, D
  • Katona, T M
  • Speck, J S
  • DenBaars, S P
  • Davis, R F
  • et al.
Abstract

The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced and coalesced GaN layers grown on striped Si or SiC substrates was studied by polychromatic X-ray microdiffraction and high resolution monochromatic X-ray diffraction. Tilt boundaries formed at the column/wing interface depending on the growth conditions and geometry of the striped substrate. The measurements revealed that the free-hanging wings are tilted upward at room temperature. A misorientation between the GaN(0001) and the Si(111) or SiC(0001) surface normal is observed. Distinct structural properties of the pendeo and cantilever epitaxially grown samples are discussed.

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