Process Development, Optimization, and Characterization of Sn Electroplating for Advanced Packaging Interconnection
Skip to main content
eScholarship
Open Access Publications from the University of California

UCLA

UCLA Electronic Theses and Dissertations bannerUCLA

Process Development, Optimization, and Characterization of Sn Electroplating for Advanced Packaging Interconnection

Abstract

Sn is an important material in the microelectronics industry. Electroplating of Sn for depositing pure Sn at low temperatures was done using acidic bath. This setup can have one application for the integration of chiplets onto a substrate. The Sn required is 99.999999% pure with primary impurity being Pb, and is chosen as the befitting material because of its excellent solderability as microbumps for fine pitch interconnection.Since, the Sn needed for bonding should be dense, uniform, 2-4 �m in thickness and smooth, the acidic baths have been more developed and studied than alkaline baths [1] for microelectronic applications. Furthermore, recently, methanesulfonic acid based systems have grown and taken a good standing because of their eco-friendly nature [2] and good adhesion and uniform coatings. The JM6000 LS bath was developed for low temperature Sn coating to have higher grain sizes for a better electrical conductivity even though the bath has grain refiners, the grain size distribution reached about the desired thickness. The aim of the research was to optimize the electroplating process parameters and investigate the effect of various parameters on the quality of the electroplated tin layer. The study provides valuable insights into the effect of process parameters such as temperature, current density, and plating time on the quality and properties of the electroplated Sn layer. The results suggest that the Sn electroplating process can be optimized to obtain a uniform, adherent, and defect-free Sn layer with desired properties.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View