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High-power AlGaN/GaN HEMTs for Ka-band applications

  • Author(s): Palacios, T
  • Chakraborty, A
  • Rajan, S
  • Poblenz, C
  • Keller, S
  • DenBaars, S P
  • Speck, J S
  • Mishra, U K
  • et al.

We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). In devices with a gate length of 160 nm, a record power density of 10.5 W/mm with 34% power added efficiency (PAE) has been measured at 40 GHz in MOCVD-grown HEMTs biased at V-DS = 30 V. Under similar bias conditions, more than 8.6 W/mm, with 32% PAE, were obtained on the MBE-grown sample. The dependence of output power, gain, and PAE on gate and drain voltages, and frequency have also been analyzed.

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