UC Santa Barbara

We describe an experimental technique to measure the chemical potential μ in atomically thin layered materials with high sensitivity and in the static limit. We apply the technique to a high quality graphene monolayer to map out the evolution of μ with carrier density throughout the N=0 and N=1 Landau levels at high magnetic field. By integrating μ over filling factor ν, we obtain the ground state energy per particle, which can be directly compared to numerical calculations. In the N=0 Landau level, our data show exceptional agreement with numerical calculations over the whole Landau level without adjustable parameters as long as the screening of the Coulomb interaction by the filled Landau levels is accounted for. In the N=1 Landau level, a comparison between experimental and numerical data suggests the importance of valley anisotropic interactions and reveals a possible presence of valley-textured electron solids near odd filling.