Structural Understanding of Self‐Assembled Rare Earth Disilicide Nanostructures Via Scanning Probe Microscopy and First Principles Studies
Abstract
We performed systematic experimental and computational studies to investigate the adsorption geometries of Y atoms on the Si(001) surface. This paves a way for understanding and eventually controlling the growth of rare earth disilicide wires on the Si(001) substrate that are promising for various applications. For a single Y atom, the interrowdn site was found to be at least 400 meV lower in energy than other possible binding sites. The emulated STM images are in good agreement with experimental results of Er on Si(001). The strong bias and coverage dependence indicates the need for theoretical guidance for the correct interpretation of experimental data. We elucidate the Y-Si binding mechanism and provide insights toward the onset of formation of hexagonal rare earth disilicide wires.
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