Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon
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Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon

  • Author(s): Bebek, C.
  • Groom, D.
  • Holland, S.
  • Karcher, A.
  • Kolbe, W.
  • Lee, J.
  • Levi, M.
  • Palaio, N.
  • Turko, B.
  • Uslenghi, M.
  • Wagner, M.
  • Wang, G.
  • et al.
Abstract

P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1x1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.

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