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Spin-Dependent Scattering off Neutral Antimony Donors in 28Si Field-Effect Transistors

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin-states in silicon based quantum computers.

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