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Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.

  • Author(s): Kumar, Suhas
  • Davila, Noraica
  • Wang, Ziwen
  • Huang, Xiaopeng
  • Strachan, John Paul
  • Vine, David
  • David Kilcoyne, AL
  • Nishi, Yoshio
  • Stanley Williams, R
  • et al.

Published Web Location

http://pubs.rsc.org/en/Content/ArticleLanding/2017/NR/C6NR07671H#!divAbstract
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Abstract

We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm2), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

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