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Electron and hole dynamics in silicon-germanium alloy measured by attosecond XUV transient absorption

  • Author(s): Zürch, M
  • Borja, LJ
  • Chang, HT
  • Kraus, PM
  • Cushing, S
  • Kaplan, CJ
  • Gandman, A
  • Prell, JS
  • Pemmaraju, CD
  • Prendergast, D
  • Neumark, DM
  • Leone, SR
  • et al.
Abstract

Electron-hole dynamics is measured by attosecond transient absorption in silicongermanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M4,5-edge, revealing electron and hole dynamics, as well as a new midgap feature.

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