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Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption
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https://doi.org/10.1364/up.2016.um1a.5Abstract
Electron-hole dynamics is measured by attosecond transient absorption in silicongermanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M4,5-edge, revealing electron and hole dynamics, as well as a new midgap feature.
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