An Investigation of Electrical and Dielectric Parameters of Sol-Gel Process Enabled β-Ga2O3 as a Gate Dielectric Material
Published Web Locationhttps://doi.org/10.1109/TED.2017.2675990
In this paper, β-Ga2O3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (Dit), and series resistance (Rs) were investigated at room temperature. The interface trap density was found to be 1012 eV-1 cm-2 using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.