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Growth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar CellsGrowth and Characterization of Self-Assembled Quantum Dots for Intermediate Band Solar Cells

  • Author(s): Sun, Meng
  • Advisor(s): Huffaker, Diana
  • et al.
Abstract

In this study, Molecular Beam Epitaxy technology is presented in detail and several powerful characterization techniques such as XRD, AFM, TEM, PL are also reviewed. SAQDs are discussed to be applied in IBSCs application due to the formation of intermediate band which helps to absorb sub-band gap photons. We investigate how the structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled through the use of thin GaAs1-xSbx cladding layers. Structural and optical properties of the SAQDs are studied, and the characteristics we demonstrate for this quantum dot system show great potential for application in intermediate band solar cells.

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