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Strain driven anisotropic magnetoresistance in antiferromagnetic La 0.4Sr0.6MnO3

  • Author(s): Wong, AT
  • Beekman, C
  • Guo, H
  • Siemons, W
  • Gai, Z
  • Arenholz, E
  • Takamura, Y
  • Ward, TZ
  • et al.

Published Web Location

https://doi.org/10.1063/1.4892420
Abstract

We investigate the effects of strain on antiferromagnetic (AFM) single crystal thin films of La1-xSrxMnO3(x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to 8%. Compressive strain suppresses magnetoresistance but generates AMR values of up to 63%. Tensile strain presents the only case of a metal-insulator transition and demonstrates a previously unreported AMR behavior. In all three cases, we find evidence of magnetic ordering and no indication of a global ferromagnetic phase transition. These behaviors are attributed to epitaxy induced changes in orbital occupation driving different magnetic ordering types. Our findings suggest that different AFM ordering types have a profound impact on the AMR magnitude and character. © 2014 Author(s).

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