UC Berkeley

Results of switching behavior of the improper ferroelectric LuFeO₃ are presented. Using a model set of films prepared under controlled chemical and growth-rate conditions, it is shown that defects can reduce the quasi-static switching voltage by up to 40% in qualitative agreement with first-principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO₃ . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.