In this work, iron germanium telluride (Fe_5 GeTe_2) was effectively synthesized from a 2:1:0.1 molar ratio of FeCl_2, Ge, and KI salt using a cascaded space CVD technique. With recent THz spectroscopy studies, the Curie temperature of Fe_5 GeTe_2 was found to reach 280 K, and its greatest conductivity was 5.445×10^5Ω−1m−1 (0.8 THz) and 5.778 × 105Ω−1m−1 (1.7 THz). X-ray photoelectron spectroscopy (XPS) was used to identify chemical species and quantify elements. The XPS depth profiling of this work showed that changes in the region of the elemental peaks can cause the percentage concentration to fluctuate between the surface (〖Fe〗_2.15Ge〖Te〗_0.37) and the higher etching level (〖Fe〗_4.73Ge〖Te〗_2.13 ≈ Fe_5 GeTe_2). Spin-orbit splitting was not observed in germanium (Ge) on Fe_5 GeTe_2, but it was observed in tellurium (Te) and iron (Fe2p1/2 and Fe2p3/2). In addition, iron has a mixed-valence oxidation state (Fe2+ and Fe3+). The percentage concentration of Germanium falls as tellurium (Te) concentration increases, suggesting that Fe_5 GeTe_2 may have a Te-terminated atomic structure. A little amount of Ni powder was added to the combination of FeCl_2, Ge, and KI powder to create a 2:1:0.2:0.1 (FeCl_2:Ge:Ni:KI) molar ratio, which was then chosen for XPS depth profiling in order to create the Ni-doped Iron Germanium Telluride. Before etching, a notable drop in the Fe^(2+)/Fe^(3+)value suggests that Ni is replacing the Fe^(2+) atom. The Ni spectra (Ni2p1/2 and Ni2p3/2) resemble the NiTe spectra with some modifications to their peak positions. Every component of the Ni-doped sample exhibits spin-orbit splitting. A strong Ge surface (Fe_5.55 Ni_1.3 TeGe_5.64) is indicated by the percentage concentration, and this drops to a greater etching level (Fe_3.6 Ni_0.47 TeGe_1.95). The material's atomic structure and characteristics might then alter. Further characterizations are required to reveal the structural, electronic and magnetic properties of the material. Overall, the synthesis of FGT and Ni doped FGT could reveal new significant properties of the materials which could be used for spintronic applications.