Abstract: Ferroelectric field effect transistors (FeFETs), characterized by their low power consumption and polarization effect, can be employed in photodetectors based on 2D materials. In this paper, a MoS2 phototransistor with epitaxial ferroelectric (Hf0.5Zr0.5)O2 (HZO) is reported as a gate dielectric layer. Gate‐dielectric‐polarization‐dependent ambipolar behavior is observed in the FET, and relatively low power consumption and hysteresis‐free loop are achieved in the FeFET. The anomalous negative photoconductivity (NPC) is observed as well. Possible reasons for such phenomenon are clarified including the photogating effect originating from the interface traps and the polarization‐dependent electric‐field control through ferroelectric gating. The high responsivity of −8.44 × 103 A W−1 in the negative photoconductivity as well as the response time of 500 ms are reported. The demonstrated Molybdenum disulfide (MoS2) FeFET photodetectors show great potential in the on‐chip complementary metal‐oxide semiconductor (CMOS)‐compatible circuits for multifunctional devices.

Photodetection is one of the vital functions for the multifunctional "More than Moore" (MtM) microchips urgently required by Internet of Things (IoT) and artificial intelligence (AI) applications. The further improvement of the performance of photodetectors faces various challenges, including materials, fabrication processes, and device structures. We demonstrate in this work MoS₂ photodetectors with a nanoscale channel length and a back-gate device structure. With the mechanically exfoliated six-monolayer-thick MoS₂, a Schottky contact between source/drain electrodes and MoS₂, a high responsivity of 4.1 × 10³ A W^-1, and a detectivity of 1.34 × 10¹³ cm Hz^1/2 W^-1 at 650 nm were achieved. The devices are also sensitive to multiwavelength lights, including 520 and 405 nm. The electrical and optoelectronic properties of the MoS₂ photodetectors were studied in depth, and the working mechanism of the devices was analyzed. The photoinduced Schottky barrier lowering (PIBL) was found to be important for the high performance of the phototransistor.

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO₃ (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO_3-δ films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO_3-δ follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO_3-δ films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO_3-δ films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.

Gelatin methacryloyl (GelMA) is a widely used hydrogel with skin-derived gelatin acting as the main constituent. However, GelMA has not been used in the development of wearable biosensors, which are emerging devices that enable personalized healthcare monitoring. This work highlights the potential of GelMA for wearable biosensing applications by demonstrating a fully solution-processable and transparent capacitive tactile sensor with microstructured GelMA as the core dielectric layer. A robust chemical bonding and a reliable encapsulation approach are introduced to overcome detachment and water-evaporation issues in hydrogel biosensors. The resultant GelMA tactile sensor shows a high-pressure sensitivity of 0.19 kPa-1 and one order of magnitude lower limit of detection (0.1 Pa) compared to previous hydrogel pressure sensors owing to its excellent mechanical and electrical properties (dielectric constant). Furthermore, it shows durability up to 3000 test cycles because of tough chemical bonding, and long-term stability of 3 days due to the inclusion of an encapsulation layer, which prevents water evaporation (80% water content). Successful monitoring of various human physiological and motion signals demonstrates the potential of these GelMA tactile sensors for wearable biosensing applications.