Particularly in advanced technology nodes, interconnects significantly affect the

power, performance, area and reliability of integrated circuits. Requirements of high

integration density, performance, complex patterning technology and cost implications

make it imperative to determine optimal back-end-of-line (BEOL) stack dimensions for

sub-22nm technology nodes. This thesis studies copper interconnect scaling strategies

for high-performance IC designs. It focuses on determining optimal dimensions of the

BEOL interconnect stack to achieve least possible delay while maintaining low power

consumption. Degrees of freedom of the optimization technique in this work are wire aspect ratio (AR) and wire line-space duty cycle (DC).1 Our study targets the interconnect

scaling strategy for 28nm through 7nm integrated device manufacturer (IDM) nodes,

which have a more rigorous scaling trend than what is seen in the pure-play foundry

“node” taxonomy. For example, the 14nm IDM node has a minimum Metal-1 pitch of

52nm [31], while the corresponding pitch for the pure-play foundry 14nm technology

node is 64nm [39]. The studies in this thesis also indicate the advantages of using a low

wire aspect ratio and a high line-space duty cycle for sub-22nm technology nodes.

1 We define AR by T/W = metal thickness / metal width, and DC using L/(L + S) = line-width /

pitch.