Silicon is a popular semiconductor in spintronics. Advancements in research into
this material has only happened through contacts. There hasn’t been any research done
by means of optical injection due to its indirect bandgap. In this dissertation, I
demonstrate the optical injection of spin polarized electrons into silicon using a muon
spin relaxation technique that utilizes spin-polarized muons to probe for conduction
electron spin polarization.
When an antimuon, a positive muon, is implanted into a semiconductor, it
captures a conduction electron and forms a muonium atom. The spin of the electron can
either be parallel or antiparallel to the muon spin. If the spin is parallel, the spins are
fixed. But, if the spins are antiparallel, then they are in a superposition of both
configurations; muon spin-up with electron spin-down plus muon spin-down plusv
electron spin-up. This spin flipping is the basis of how the muons can probe for the
conduction electron spin polarization.
The experiment was completed on both n-type and intrinsic silicon to prove the
existence in two different types. The wavelength was scanned over an interval slightly
above the bandgap since there is virtually no absorption at the bandgap. Since silicon is
an indirect bandgap, the photons alone can’t be absorbed into the bottom of the bandgap
due to the momentum shift, so phonons are required to either be absorbed or emitted to
preserve momentum conservation. Due to the low temperature of the experiment,
phonon emission is the only practical path for absorption. Several parameters, including
wavelength, applied magnetic field, and laser power, were varied to find the and analyze
signal. The experiment was carried out over the course of several years, and trips, to the
ISIS pulsed muon source with a successful detection of the conduction electron spin
polarization in both the n-type and intrinsic silicon samples