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Phase stability and defect physics of a ternary ZnSnN(2) semiconductor: first principles insights.
- Author(s): Chen, Shiyou
- Narang, Prineha
- Atwater, Harry A
- Wang, Lin-Wang
- et al.
Published Web Location
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201302727No data is associated with this publication.
Abstract
First-principles calculations show that ZnSnN2 has a very small formation enthalpy, and the donor defects such as SnZn antisites and ON impurities have high concentration, making the material degenerately n-type, which explains the observed high electron concentration. ZnSnN2 can be regarded as a new material that combines a metal-like conductivity with an optical bandgap around 2 eV.